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INFO
PECVD literally means: plasma (P) enhanced (E) chemical vapor deposition (CVD). The reaction gas is converted into plasma under the action of radio frequency (RF) of the equipment to conduct chemical reaction to generate the required membrane materials. The reaction temperature is relatively low. The film forming density is worse than that of furnace tube. But it is efficient and easy to maintain.
Generally speaking, when PECVD technology is used to prepare film materials, the film growth mainly includes the following three basic processes:
First, in the non-equilibrium plasma, the electrons react with the reaction gas at the primary level, causing the reaction gas to decompose, forming a mixture of ions and active groups;
Secondly, various active groups diffuse and transport to the film growth surface and pipe wall, and secondary reactions occur between reactants at the same time;
Finally, various primary and secondary reaction products reaching the growth surface are adsorbed and react with the surface, accompanied by the re release of gaseous molecules.
Gases (such as SiH4, NH3, N2, etc.) are ionized into ions under the action of RF power supply; After multiple collisions, a large number of SiH3 -, H – and other active groups are produced; These active groups are adsorbed on the substrate or replace the H atoms on the surface of the substrate; Adsorbed atoms at their own kinetic energy and substrate temperature
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